M. F. Li - Concepedia

Author

M. F. Li

National University of Singapore ORCID

Also Known As

M. F. Li, M.-F. Li, M.F. Li, Mengcheng Li, Mo Li, Motong Li

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

National University of Singapore The University of Texas at Austin Nanyang Technological University Institute of Microelectronics Fudan University

About

M. F. Li is an author at National University of Singapore specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	20	1.1K
2	Applied Physics	16	21	1.1K
3	Electrical Engineering	13	14	857
4	Materials Science	10	10	515
5	Materials Engineering	3	3	255

M. F. Li

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Electronic band structures and effective-mass parameters of wurtzite GaN and InN Yee‐Chia Yeo, Tow Chong Chong, M. F. Li Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	304
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−<i>x</i>Al<i>x</i>N W. J. Fan, M. F. Li, Tow Chong Chong, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesElectronic PropertiesSemiconductors	1996	147
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric Nan Wu, Qingchun Zhang, Chunxiang Zhu, Applied Physics Letters Surface Sih4 AnnealingHigh-k Gate DielectricEngineeringAlternative Surface PassivationSilicon On Insulator	2004	114
Thermal stability of (HfO2)x(Al2O3)1−x on Si H.Y. Yu, Nan Wu, M. F. Li, Applied Physics Letters Materials EngineeringMaterials SciencePure Hfo2EngineeringHf Aluminates	2002	92
Valence hole subbands and optical gain spectra of GaN/Ga1−<i>x</i>Al<i>x</i>N strained quantum wells W. J. Fan, M. F. Li, Tow Chong Chong, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesOptical Gain SpectraSemiconductors	1996	63
Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers Yee‐Chia Yeo, Tow Chong Chong, M. F. Li, Journal of Applied Physics Wide-bandgap SemiconductorPhotonicsElectrical EngineeringValence Subband StructuresEngineering	1998	55
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate Xiongfei Yu, Chunxiang Zhu, M. F. Li, Applied Physics Letters EngineeringSilicon On InsulatorBoron Penetration BehaviorHftao FilmsSemiconductor Device	2004	48
Empirical pseudopotential band-structure calculation for Zn1−<i>x</i>Cd<i>x</i>S<i>y</i>Se1−<i>y</i> quaternary alloy Yuan Ping Feng, K. L. Teo, M. F. Li, Journal of Applied Physics Materials ScienceIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringPhysics	1993	38
Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs Tony Low, M. F. Li, Ganesh Samudra, IEEE Transactions on Electron Devices EngineeringEnhanced Threshold VoltageSilicon On InsulatorGermanium Utb MosfetsSemiconductor Device	2005	37
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well W. J. Fan, Agus Putu Abiyasa, Swee Tiam Tan, Journal of Crystal Growth Ii-vi SemiconductorOxide ElectronicsApplied PhysicsWurtzite ZnoSemiconductor Nanostructures	2005	35

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