Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Abstract

Mechanisms controlling the deposition incubation time of Si on SiO 2 are studied. Two major mechanisms are considered to affect the incubation time: desorption of adsorbate that is not captured by existing islands, and differing sticking probabilities between islands and substrate. Results indicate that desorption of adsorbate seems to have less contribution and the sticking probability mechanism controls island growth (Figure), and therefore is the main cause for the incubation time in silane CVD processes.