IEEE Transactions on Electron Devices · 2002 · 16 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesSemiconductor PhysicsWide-bandgap Semiconductor DevicesBarrier Effect ModelingCarrier Transport MechanismsCharge DistributionCutoff FrequencyHeterojunction DevicesHeterojunctionsMetal-oxide-semiconductor Field-effect Transistor ModelingSemiconductor Heterojunctions
A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si-SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in SiGe HBTs.
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VBIC95, the vertical bipolar inter-company model
Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · IEEE Journal of Solid-State Circuits · 1996 · 238 citations