Concepedia

Ramana Malladi

RM

Statistics

Publications

6

Citations

176

H-Index

6

Active since

2002

Affiliations

IBM (United States)(Current)

Ramana Malladi is an author at IBM (United States) specializing in microelectronics, semiconductor devices, and engineering.

Publications per year

2002–2008

6

Publications

6

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 78 citations

Engineering, Electrical Engineering, Microelectronics +16

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

Alvin Joseph, J. D. Gillis, M. Doherty et al. · IBM Journal of Research and Development · 2008 · 37 citations

Engineering, Electrical Engineering, Microelectronics +16

A 0.35 ¿m SiGe BiCMOS Technology for Power Amplifier Applications

Alvin Joseph, Qizhi Liu, W. Hodge et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2007 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Electron Devices · 2002 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe BiCMOS technologies for power amplifier applications

Jeffrey B. Johnson, Alvin Joseph, David C. Sheridan et al. · 2003 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +16

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