K. Newton

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

John J. Pekarik, J. Adkisson, Peter Gray et al. · 2014 · 100 citations

Engineering, Electrical Engineering, Microelectronics +16

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 78 citations

Engineering, Electrical Engineering, Microelectronics +16

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies

D.L. Harame, K. Newton, Raminderpal Singh et al. · IBM Journal of Research and Development · 2003 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Electron Devices · 2002 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Statistical BSIM model for MOSFET 1/f noise

R. Anna, K. Newton, E.L. Adler · Electronics Letters · 2005 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +17