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Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring
164
Citations
20
References
2011
Year
EngineeringThrough-silicon ViaInterconnect (Integrated Circuits)Noise ReductionElectromagnetic CompatibilityAdvanced Packaging (Semiconductors)Noise IsolationMixed-signal Integrated CircuitNoiseElectronic PackagingThree-dimensional Integrated Circuit3D Ic ArchitectureElectrical EngineeringComputer EngineeringMicroelectronicsGuard RingNoise CouplingGuard Ring Structure3D Integration
In 3D‑ICs using TSV technology, coupling noise is a key design concern, requiring accurate estimation of TSV noise transfer functions to manage noise‑tolerance budgets. The study proposes a TSV noise coupling model using a 3D‑TLM and a guard‑ring based noise isolation technique for 3D‑ICs. The model estimates TSV‑to‑TSV and TSV‑to‑circuit transfer functions in complex 3D structures, and its validity was tested with a Hynix via‑last TSV process fabricated vehicle. Frequency‑ and time‑domain measurements confirmed the model, and the guard‑ring isolation technique achieved 17 dB and 10 dB noise suppression at 100 MHz and 1 GHz.
In three-dimensional integrated circuit (3D-IC) systems that use through-silicon via (TSV) technology, a significant design consideration is the coupling noise to or from a TSV. It is important to estimate the TSV noise transfer function and manage the noise-tolerance budget in the design of a reliable 3D-IC system. In this paper, a TSV noise coupling model is proposed based on a three-dimensional transmission line matrix method (3D-TLM). Using the proposed TSV noise coupling model, the noise transfer functions from TSV to TSV and TSV to the active circuit can be precisely estimated in complicated 3D structures, including TSVs, active circuits, and shielding structures such as guard rings. To validate the proposed model, a test vehicle was fabricated using the Hynix via-last TSV process. The proposed model was successfully verified by frequency- and time-domain measurements. Additionally, a noise isolation technique in 3D-IC using a guard ring structure is proposed. The proposed noise isolation technique was also experimentally demonstrated; it provided -17 dB and -10dB of noise isolation between the TSV and an active circuit at 100 MHz and 1 GHz, respectively.
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