EngineeringElectrical EngineeringCeramicsCircuit TheorySemiconductor DevicesDevice ModelingDevice SimulationIntegrated Circuit DesignSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageHigh-voltage BreakdownNumerical Device SimulationRectifier DesignSilicon Carbide Power Devices
A novel multi-zone junction termination extension (MZJTE) is presented for high-voltage 4H-SiC pin junction rectifiers. Unlike the conventional multi-implantation or SiC etching approaches, our new termination technique utilizes multiple masking oxide etching steps to achieve a single-implant MZJTE structure that maintains surface planarity. Numerical device simulations have been performed to examine the process sensitivities, compared to single-zone JTE, and yielded breakdown voltages close to 90% of the ideal parallel-plane breakdown voltage. High voltage (V/sub BR//spl ap/8 kV) rectifiers were fabricated and experimental characteristics have been measured.
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12-19 kV 4H-SiC pin diodes with low power loss
Y. Sugawara, Daisuke Takayama, K. Asano et al. · 2002 · 110 citations