IEEE Electron Device Letters · 1988 · 51 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsSolar Photovoltaic SystemsDark CurrentFill FactorHeterojunction Solar CellsOpen-circuit VoltageP-n Junction Solar CellsRecombination LossesSolar Cell CharacterizationSolar Cell Device Physics
Perimeter recombination currents have been characterized for 0.5-cm-square and 2-cm-square p/n GaAs solar cells. Measurements show that perimeter recombination dominates the n=2 dark current component of these high-efficiency solar cells. The results also suggest that perimeter recombination will be substantial even in much-larger-area solar cells. Although little influence on open-circuit voltage is expected, perimeter recombination may adversely affect the cell's one-sun fill factor. Because of its importance to one-sun applications, recombination at the junction perimeter must be suppressed before GaAs solar cells approach their limiting conversion efficiencies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Nearly ideal electronic properties of sulfide coated GaAs surfaces
Eli Yablonovitch, C. J. Sandroff, R. Bhat et al. · Applied Physics Letters · 1987 · 338 citations
Natural Sciences, Materials Engineering, Materials Science +17
Device processing and analysis of high efficiency GaAs cells
S. P. Tobin, S. M. Vernon, C. Bajgar et al. · Solar Cells · 1988 · 34 citations