IEEE Electron Device Letters · 1989 · 11 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingIntegrated Circuit DesignIntegrated Circuit DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesDevice FabricationGate DielectricsParasitic Capacitance ReductionParasitic Inductance Effects
A MESFET-compatible structure for GaAs capacitive-gate CCDs that eliminates the necessity for submicrometer interelectrode gaps and simplifies device fabrication is presented. This recessed-gap structure solves problems of low gate-channel-gate breakdown and large parasitic gate-to-gate capacitance associated with ultrasmall gaps. Dark current is also reduced. Modeling and experimental results are reported.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
Continuously clocked 1 GHz GaAs CCD
I. Deyhimy, Winfield Hill, R.J. Anderson · IEEE Electron Device Letters · 1981 · 23 citations
Microwave Frequency GaAs Charge-Coupled Devices
E.A. Sovero, R. Sahai, Winfield Hill et al. · 1984 · 12 citations