IEEE Electron Device Letters · 1981 · 23 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor PhysicsBuried Channel DevicesCarrier Transport MechanismsCharge Transfer EfficiencyField-effect Transistor Transfer CharacteristicsFrequency TransferHigh-frequency ElectronicsSchottky Barrier DiodesTransfer Efficiency
The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.
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