IEEE Transactions on Electron Devices · 1980 · 30 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge-coupled DevicesDetector TechnologyHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsCharge Transfer EfficiencyCharge-coupled Device DetectorsDetector FabricationHeterojunction DevicesSchottky Barrier DiodesSemiconductor HeterojunctionsTransfer Efficiency
A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0.999/transfer and-have operated at clock frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f_{cl} = 500</tex> MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.
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CHARGE COUPLED 8-BIT SHIFT REGISTER
M.F. Tompsett, G. F. Amelio, George Smith · Applied Physics Letters · 1970 · 110 citations
Engineering, Computer Engineering, Electrical Engineering +11
The prospects for ultrahigh-speed VLSI GaAs digital logic
R.C. Eden, B.M. Welch, R. Zucca et al. · IEEE Transactions on Electron Devices · 1979 · 52 citations
Engineering, Computer Engineering, Electrical Engineering +17
I. Deyhimy, J. S. Harris, R.C. Eden et al. · Applied Physics Letters · 1978 · 33 citations
A 500-MHz GaAs charge-coupled device
I. Deyhimy, R.C. Eden, R.J. Anderson et al. · Applied Physics Letters · 1980 · 12 citations
A Schottky-barrier CCD on GaAs
W. Kellner, H. Bierhenke, Hermann Kniepkamp · 1977 · 10 citations