Applied Physics Letters · 1980 · 12 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge-coupled DevicesCmos Circuit DesignHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor PhysicsCarrier Transport At High FrequencyCarrier Transport MechanismsElectron MobilityGaas Microwave Integrated CircuitsHigh-frequency ElectronicsSchottky Barrier CharacteristicsSchottky Barrier DiodesTransit Frequency
The higher electron mobility in GaAs relative to silicon makes it possible to design an ultra-high-Speed charge-coupled device. A buried-channel Schottky barrier gate GaAs charge-coupled device (CCD) is described which has been operated at up to 500 MHz clock frequency. The transit-time-limited upper clock frequency in this device is predicted to exceed 5 GHz.
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M.F. Tompsett · Journal of Vacuum Science and Technology · 1972 · 246 citations
I. Deyhimy, J. S. Harris, R.C. Eden et al. · Applied Physics Letters · 1978 · 33 citations