A novel CMOS-compatible high-voltage transistor structure

Abstract

A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, ie described. This device, which can be implemented using a standard CMOS process, is capable of handling high current densities without latching. The IBT exhibits a fivefold increase in current density compared to the lateral DMOS. A simple technique by which the switching speeds of the IBT can be improved by almost an order of magnitude without significantly compromising its current carrying capability is also presented.