Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN

Hole Compensation Mechanism of P-Type GaN Films

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Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 214 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ridge-geometry InGaN multi-quantum-well-structure laser diodes

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Engineering, Electrical Engineering, Materials Science +17

Nonalloyed Ti/Al Ohmic contacts to <i>n</i>-type GaN using high-temperature premetallization anneal

L. F. Lester, Judith M. Brown, J. Ramer et al. · Applied Physics Letters · 1996 · 107 citations

Engineering, Materials Engineering, Materials Science +17

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

S. D. Hersee, J. Ramer, Kefei Zheng et al. · Journal of Electronic Materials · 1995 · 60 citations

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