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The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

Materials EngineeringLayer ThicknessElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideOmvpe GrowthCategoryiii-v SemiconductorOptoelectronics