1991 · 11 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsCrystallizationCrystallization DefectsHeterojunction Bipolar TransistorsLeakage CurrentLeakage Current Reduction
In this paper, we describe a thin-base lateral BJT fabricated on bonded SOI, and explore the device's characteristics. High gain, high-speed AC characteristics and no leakage current range are obtained due to both the thin base and the fine crystallization of the bonded SOI film.