Solid-State Electronics · 1995 · 23 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationIntegrated Circuit DesignShort-channel EffectsChannel CharacterizationChannel Length ScalingCompact Device ModelingEffective Length FactorField-effect Transistor SimulationGate Oxide Thickness EffectsMosfet Modeling
4
A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations