Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

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Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

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A modified Marquardt subroutine for non-linear least squares

R. Fletcher · 1971 · 205 citations

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Simulation of doping processes

H. Ryssel, K. Haberger, Klaus H. Hoffmann et al. · IEEE Transactions on Electron Devices · 1980 · 84 citations

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Limitations of the CV technique for ion-implanted profiles

Chih-Wei Wu, E. C. Douglas, C.W. Mueller · IEEE Transactions on Electron Devices · 1975 · 66 citations

Materials Engineering, Ion-implanted Impurity Distributions, Electrical Engineering +11

Range parameters of boron implanted into silicon

H. Ryssel, G. Prinke, K. Haberger et al. · Applied Physics B · 1981 · 35 citations

Engineering, Physics, Applied Physics +4