S. Oosterhoff

Annealing of ion-implanted resistors reduces the 1/ <i>f</i>  noise

L.K.J. Vandamme, S. Oosterhoff · Journal of Applied Physics · 1986 · 84 citations

Engineering, Ion-implanted Resistors, Integrated Circuits +17

Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

S. Oosterhoff · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1988 · 33 citations · Full text

Energy Range 0.1–1.5, Ion Implantation, Engineering +4

The annealing of 1 MeV implantations of boron in silicon

S. Oosterhoff, J. Middelhoek · Solid-State Electronics · 1985 · 13 citations

Materials Science, Materials Engineering, Boron Nitride +10

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

M. Vos, D.O. Boerma, P.J.M. Smulders et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 12 citations

Boron-implanted Silicon, Engineering, Physics +9