2004 · 13 citations · 2 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIon ImplantationMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsFlash Lamp AnnealingImpuritiesJunction Leakage CurrentLeakageLeakage Current ReductionShallow Junction FormationThreshold VoltageThreshold Voltage Roll-off
Flash lamp annealing (FLA) was first applied to complementary MOSFETs (CMOS) as a new method of activating implanted impurities in source and drain. By optimizing ion implantation and activation annealing conditions, junction depth less than 10 nm with good junction leakage were successfully obtained for both p/sup +//n and n/sup +//p junctions. Threshold voltage (V/sub th/) roll-off characteristics for MOSFETs fabricated by FLA show drastic improvement as compared with conventional spike annealing.
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Flash lamp annealing technology for ultra-shallow junction formation
Takayuki Ito, K. Suguro, M. Tamura et al. · 2002 · 17 citations