T. Itani

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

S. Inaba, K. Okano, Shôichi Matsuda et al. · IEEE Transactions on Electron Devices · 2002 · 75 citations

Engineering, Electrical Engineering, Microelectronics +16

Low-resistance ultrashallow extension formed by optimized flash lamp annealing

Toshihide Ito, K. Suguro, M. Tamura et al. · IEEE Transactions on Semiconductor Manufacturing · 2003 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +13

Flash lamp annealing technology for ultra-shallow junction formation

Takayuki Ito, K. Suguro, M. Tamura et al. · 2002 · 17 citations

Engineering, Electrical Engineering, Materials Science +14

Improvement of threshold voltage roll-off by ultra-shallow junction formed by flash lamp annealing

Takayuki Ito, K. Suguro, T. Itani et al. · 2004 · 13 citations

Engineering, Electrical Engineering, Electronic Materials +16

A 2.9 μm/sup 2/ embedded SRAM cell with co-salicide direct-strap technology for 0.18 μm high performance CMOS logic

K. Noda, K. Matsui, Ken‐ichi Inoue et al. · 2002 · 10 citations

Engineering, Computer Engineering, Electrical Engineering +17