IEEE Electron Device Letters · 2012 · 34 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesGate Drive CircuitsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityThin-film TransistorsAmorphous Indium Gallium Zinc OxideDepletion Region EngineeringDepletion-mode TransistorsDisplay Driving CircuitsGallium Nitride Gate DriversGate Drive Circuit ReliabilityGate Driver DesignHigh-frequency Electronics
We proposed and fabricated a depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistor gate driver without any additional signals. The proposed gate driver successfully exhibited a high-voltage output pulse without distortion at a clock frequency of 100 kHz, which is enough to drive a high-frequency panel with a frame rate of ~360 Hz and a resolution of full high definition. The experimental and simulation results showed that the gate driver would be highly reliable under light illumination. Also, the output waveform of the gate driver was not distorted after 240-h driving under 450-nm illumination with an intensity of 1 mW/ cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 60 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C.
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