IEEE Electron Device Letters · 2011 · 64 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIii-v SemiconductorsIntegrated Circuit DesignThin-film TransistorsAmorphous Indium Gallium Zinc OxideDepletion-mode TransistorsHigh-voltage Power SupplyOxide Thin-film TransistorsPower ConsumptionShift Registers
We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (a-IGZO TFT) shift register. Although only one low-voltage-level power signal (VGL) rather than widely used two ones was employed, the depletion-mode a-IGZO TFTs in the proposed shift register were turned off completely due to a series-connected two-transistor structure. The proposed shift register exhibited successfully a high-voltage output pulse. The power consumption of the shift register with ten stages is 1.67 mW at the high-voltage-level power signal of 20 V, the VGL of -5 V, and the clock frequency of 13.9 kHz.
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New Depletion-Mode IGZO TFT Shift Register
Binn Kim, Chang-Il Ryoo, Sun-Jae Kim et al. · IEEE Electron Device Letters · 2010 · 109 citations