Journal of Lightwave Technology · 1988 · 51 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityMaterial DegradationPhotodetectorsSemiconductor DetectorsSemiconductor ReliabilityAvalanche MultiplicationAvalanche PhotodiodesCharge AccumulationDark CurrentDevice DegradationLong-term Device ReliabilityPhotodiodesWearout Mechanisms
Bias-temperature tests of InP/InGaAs avalanche photodiodes have been conducted to evaluate long-term reliability at temperatures from 200-250 degrees C. Wearout -failure modes with a gradual increase in dark current occur at all testing levels. Failure analyses using the light-beam-induced current method suggest that the degradation is caused by local avalanche multiplication in the guard-ring periphery. A surface degradation mechanism is proposed, namely, positive charge accumulation in the passivation film above the guard-ring region, followed by local avalanche multiplication at the guard-ring periphery. A tentative activation energy of 1.7 eV is obtained for this failure mode, and the extrapolated median life exceeds 10/sup 10/ h in practical use.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Temperature dependence of impact ionization coefficients in InP
K. Taguchi, T. Torikai, Yoshimasa Sugimoto et al. · Journal of Applied Physics · 1986 · 58 citations
Investigation of microplasmas in InP avalanche photodiodes
F. Capasso, P. M. Petroff, W.B. Bonner et al. · IEEE Electron Device Letters · 1980 · 23 citations