IEEE Electron Device Letters · 1980 · 23 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAvalanche ProcessesPhotodetectorsSemiconductor DetectorsAvalanche BreakdownAvalanche Photodiode DetectorsAvalanche PhotodiodesDoping MechanismsDoping ProfilesPhotodiodes
The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Slope discontinuities in the I-V characteristic have been correlated to the turn on voltage of microplasmas.
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Problems related to p-n junctions in silicon
W. Shockley · Solid-State Electronics · 1961 · 917 citations
The characterization of highly-zinc-doped InP crystals
S. Mahajan, W. A. Bonner, Albert Chin et al. · Applied Physics Letters · 1979 · 52 citations