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Investigation of microplasmas in InP avalanche photodiodes
23
Citations
3
References
1980
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsElectron BeamNanoelectronicsApplied PhysicsCurrent TechniquePhotoelectric MeasurementInp Avalanche PhotodiodesMicroelectronicsOptoelectronicsCompound SemiconductorSemiconductor Device
The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Slope discontinuities in the I-V characteristic have been correlated to the turn on voltage of microplasmas.
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