K. Taguchi

InGaAsP heterostructure avalanche photodiodes with high avalanche gain

Katsuhiko Nishida, K. Taguchi, Yoshishige Matsumoto · Applied Physics Letters · 1979 · 193 citations

Semiconductors, Photonics, Electrical Engineering +13

Temperature dependence of impact ionization coefficients in InP

K. Taguchi, T. Torikai, Yoshimasa Sugimoto et al. · Journal of Applied Physics · 1986 · 58 citations

Electrical Engineering, Ion Implantation, Engineering +12

High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

Issei Watanabe, S. Sugou, Hiroaki Ishikawa et al. · IEEE Photonics Technology Letters · 1993 · 50 citations

Ghz Gain-bandwidth Product, Engineering, Integrated Circuits +16

Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 mu m wavelength optical communication use

K. Taguchi, T. Torikai, Yoshimasa Sugimoto et al. · Journal of Lightwave Technology · 1988 · 42 citations

Free-space Optical Network, Photonics, Electrical Engineering +13

Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes

Issei Watanabe, Masayoshi Tsuji, Mikiko Hayashi et al. · IEEE Photonics Technology Letters · 1996 · 40 citations

Reliable Lifetime, Electrical Engineering, Different Temperatures +10