Applied Physics Letters · 1979 · 194 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsOptoelectronic DevicesP-n JunctionsPhotodetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresAvalanche GainAvalanche PhotodiodesCurrent DensityHeterostructure DevicesHeterostructure OptoelectronicsHeterostructure PhotodetectorsLight-absorbing LayersPhotodiodes
Distinct improvements in avalanche-gain and dark-current characteristics have been made in InGaAsP heterostructure APD’s. A planar-type p-n junction is formed in an InP window layer, separated from a light-absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark-current density as low a 1 μA/cm2 at 0.5 Vb.
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GaInAsP/InP avalanche photodiodes
C. E. Hurwitz, J. J. Hsieh · Applied Physics Letters · 1978 · 109 citations
Ion-implanted InGaAsP avalanche photodiode
H. D. Law, L. R. Tomasetta, K. Nakano · Applied Physics Letters · 1978 · 43 citations