Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices

Abstract

The paper presents functional MOSFET (F-MOSFET) architecture using nonpolar-type resistive switching devices (RSDs) for nonvolatile SRAM (NV-SRAM) application. The architecture can be achieved by connecting a RSD to the source terminal of an ordinary MOSFET. The current drive capability of the F-MOSFET can be modified by the resistance state of the connected RSD, which is a very useful function for recently emerging nonvolatile logic and reconfigurable logic applications. NV-SRAM can be easily configured with a standard SRAM cell and F-MOSFETs. Using our developed SPICE macromodel for nonpolar-type RSDs, the circuit operation of the proposed NV-SRAM cell was computationally simulated.