IEEE Transactions on Electron Devices · 1990 · 26 citations · 13 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDynamic Power ReductionEnergy StorageHigh-frequency Semiconductor DevicesLow-power Digital Circuit DesignMemory DevicesPower ManagementCapacitorsCharge TransportDynamic Power DissipationDynamic Random-access MemoryLow-power Memory CircuitsMemory Circuit DesignRoom-temperature StorageStorage
Theoretical and experimental work that presents the possibility for a high-speed, low-power one-transistor room-temperature dynamic RAM (DRAM) technology in GaAs is discussed. Isolated storage capacitors have demonstrated over 20 min of storage time at room temperature with charge densities comparable to that obtained with planar silicon technology. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above. The standby power dissipation of these first cells is only a small fraction of the power dissipated by the best commercial GaAs static RAM (SRAM) cells.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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