IEEE Electron Device Letters · 2001 · 20 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignIntegrated Circuit DesignMixed-signal Integrated Circuit DesignTiming AnalysisTiming ModelingCmos Analog Integrated CircuitsCmos Fabrication ProcessesCmos OscillatorsCmos Radio-frequency CircuitsRing OscillatorsShift RegistersSignal Propagation DelaySilicon-based Oscillators
High-performance CMOS circuits are fabricated from excimer-laser-annealed poly-Si TFTs on a glass substrate (300×300 mm). The propagation delay time of the 121 stage CMOS ring oscillators with 0.5 μm gate length is 0.18 nsec at 5 V supply voltage. The maximum operating frequency of the 40-stage shift registers with 1 μm gate length is 133 MHz at 5 V supply voltage. This value is high enough for peripheral CMOS circuits with line-at-a-time addressing.
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Small geometry effects in n- and p-channel polysilicon thin film transistors
A.G. Lewis, I‐Wen Wu, T.Y. Huang et al. · 2003 · 18 citations