Scanning · 1997 · 14 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceMaterials CharacterizationMaterials ChemistrySemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsCathodoluminescence MicroscopyEpitaxial Film MorphologyEpitaxial MaterialsSemiconductor CharacterizationSemiconductor NanostructuresSilicon CarbideSilicon Carbide (Sic) MaterialsSublimation
Abstract Scanning electron microscopy technique in colour cathodoluminescence mode is proposed for two‐dimensional (2‐D) and three‐dimensional (3‐D) studies of polytype structures of SiC epitaxial layers grown by the sublimation sandwich method. It allows us to perform layer‐by‐layer structure analysis of a polytype on depths up to 2.5 μm with high resolution. An effect of polytype instability under growth on singular substrate (0001) is revealed. It leads to the fact that the grown SiC layer represents the set of alternating sublayers of different polytypes such as 4H, 6H, and 3C. Some mechanisms of polytype syntaxy in SiC are discussed.
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