IEEE Transactions on Electron Devices · 2002 · 18 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesSemiconductor Device MaterialsDevice IsolationHigh-frequency IsolationInductorsIsolationSelf-heating EffectsSilicon-on-insulator CmosSilicon-on-insulator TechnologySystem-on-chip Architecture
In this paper, novel structures are reported to improve the cross-talk isolation, the performance of on-chip inductors, and the self-heating in a thin-film silicon-on-insulator (TFSOI) technology. In these structures, p/sup +/ substrate contact rings are used to improve the cross-talk isolation, appropriately doped TFSOI layers are used for high-Q inductors, and source contacts connected to the substrate are used to minimize the self-heating problem. The p/sup +/ substrate contact rings provide -57 dB isolation (typically characterized for a device spacing of 100 /spl mu/m) at 10 GHz, which is the best ever reported in TFSOI technology. A maximum Q-factor of 10.4 is obtained for TFSOI-layer shielded on-chip inductors. The inductor-to-inductor isolation is -62 dB (for a spacing of 100 /spl mu/m) at 10 GHz, which is close to the ideal isolation of the open probes. The source contacts connected to the substrate improves the self-heating by 16%. The excellent cross-talk isolation performance, high-Q on-chip inductors, and reduced self-heating make the TFSOI technology a very suitable candidate for mixed signal system-on-a-chip (SOC) applications.
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Measurement and modeling of self-heating in SOI nMOSFET's
L.T. Su, J.E. Chung, D.A. Antoniadis et al. · IEEE Transactions on Electron Devices · 1994 · 331 citations
Substrate crosstalk reduction using SOI technology
Jean‐Pierre Raskin, A. Viviani, Denis Flandre et al. · IEEE Transactions on Electron Devices · 1997 · 292 citations