Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 51 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAtomic Force MicroscopyDevice CharacterizationElectrical CharacterizationScanning Probe MicroscopySemiconductor InterfacesSemiconductor SurfacesDopant ProfilingElectrostatic Force MicroscopyKelvin Probe Force MicroscopyPotential DifferenceSemiconductor Doping ProfilesWork FunctionWork Function DeterminationWork Function Difference
A force-based scanning Kelvin probe microscope has been used to image dopant profiles in silicon for integrated circuit devices on a submicron scale. By measuring the potential difference which minimizes the electrostatic force between a probe and surface of a sample, an estimate of the work function difference between the probe and surface may be made. To the extent that this work function difference is a consequence of the dopant concentration near the sample surface, doping profiles are inferred from the measurements. An overview of the measurement technique is presented, along with several examples of resulting dopant imaging of integrated circuits.
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