IEEE Transactions on Nuclear Science · 1994 · 37 citations · 8 references
EngineeringComputer EngineeringElectrical EngineeringFault-tolerant ComputingMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityError DetectionHardware Fault ToleranceBit Error RateFault-tolerant MemoryMemory Fault ToleranceMemory ReliabilitySoft Errors
A Single Hard Error (SHE) characterization was performed on two types of 1 Mbit SRAMs:MT5C1008 from MICRON and MSM8128 from HITACHI. On both types, test results showed that one single ion is sufficient to create a stuck bit. An orbit SHE rate calculation showed that the probability to have a stuck bit in space on a single 1 Mbit SRAM is rather low.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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