Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 15 citations · 0 references
EngineeringElectron-beam LithographyX-ray MasksOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceMask FabricationBeam LithographyMask SetsNanolithography MethodMaterials ScienceSynchrotron X-ray LithographyElectrical EngineeringMultilayer Resist SystemCrystalline DefectsOxide ElectronicsOxide SemiconductorsSemiconductor Device FabricationMicroelectronicsMicrofabricationSurface ScienceApplied PhysicsBeyond Cmos
Several sets of x-ray masks for a metal–oxide semiconductor (MOS) device program were fabricated using boron-doped silicon as the membrane and gold as the absorber. The metrology of the mask sets was characterized. Mask-to-mask overlay error is <0.12 μm (3σ) including measurement error. Absorber induced distortion is not the dominating mask error. (Lack of better measurement systems and techniques preclude exact analysis of errors.) Quarter-micron patterns have been resolved using a multilayer resist system. Linewidth variations are <0.017 μm (1σ) across the entire membrane. The mask sets have been successfully used to fabricate fully scaled n-type MOS circuits.