Parameterized SPICE model for a phase-change RAM device

Abstract

A simple form of a SPICE macro model for a generic phase-change random access memory device is presented. The approach is based upon lumped parameter multiple level models. The SPICE implementation is described using a series of increasingly complex modeling blocks for dc to transient analysis. The effect of nonlinear phase switching during the programming cycle is demonstrated in a SPICE simulation and compared to experimental data.