T. Lowrey - Concepedia

Author

T. Lowrey

Intel (United States)

Also Known As

T Lowrey, T. Lowrey, T.A. Lowrey, Tyler A. Lowrey, Tyler Lowrey

Publications

782

Citations

H-Index

Concepts

All Affiliations

Intel (United States)

About

T. Lowrey is an author at Intel (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	772
2	Applied Physics	6	6	593
3	Computer Engineering	5	5	690
4	Business	1	1	19
5	Law	1	1	19

T. Lowrey

Publications

772

Citations

H-Index

Page 1

	Year	Citations
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications Sz‐Nian Lai, T. Lowrey Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsNanotechnology	2002	284
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications F. Pellizzer, A. Pirovano, F. Ottogalli, Non-volatile MemoryElectrical EngineeringEngineeringArray DensityNanoelectronics	2004	182
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications M. Gill, T. Lowrey, Jongsun Park 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2005	91
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications M. Gill, T. Lowrey, Jongsun Park 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2003	69
Nonvolatile, high density, high performance phase-change memory Scott Tyson, Guy Wicker, T. Lowrey, Hardware SecurityMaterials EngineeringElectrical EngineeringHigh DensityEngineering	2002	64
Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention W. Czubatyj, S. J. Hudgens, Charles H. Dennison, IEEE Electron Device Letters Materials ScienceMaterials EngineeringEngineeringCrystalline DefectsNanophase Dielectric Inclusions	2010	30
The transistor: an invention becomes a big business C. M. Melliar‐Smith, Michaël Borrus, D.E. Haggan, Proceedings of the IEEE MiniaturizationEngineeringIndustrial EngineeringLawBig Business	1998	19
Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications T. Lowrey, S. J. Hudgens, W. Czubatyj, MRS Proceedings Materials ScienceNon-volatile MemoryEngineeringEmerging Memory TechnologyApplied Physics	2003	17
MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications J. F. Zheng, J.R. Reed, Carl Schell, IEEE Electron Device Letters Materials ScienceElectrical EngineeringMaterial AnalysisHigh Temperature MaterialsEngineering	2010	16

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