2004 · 183 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesEmbedded Memory BlocksMemory DevicesCmos ScalingData RetentionMemory Cell DesignMemory Circuit DesignNon-volatile Cmos MemoryNon-volatile MemoryNon-volatile Memory DesignPhase-change Memory
A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new /spl mu/trench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 /spl mu/A, endurance of 10/sup 11/ programming cycles and data retention capabilities for 10 years at 110/spl deg/C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.
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Current status of the phase change memory and its future
Sz‐Nian Lai · 2004 · 349 citations
Engineering, Computer Engineering, Electrical Engineering +14
Scaling analysis of phase-change memory technology
A. Pirovano, Andrea L. Lacaita, A. Benvenuti et al. · 2004 · 255 citations
Engineering, Computer Engineering, Electrical Engineering +16
An 8Mb demonstrator for high-density 1.8V Phase-Change Memories
F. Bedeschi, Claudio Resta, O. Khouri et al. · 2004 · 93 citations
Engineering, Computer Engineering, Electrical Engineering +16