Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Abstract

A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new /spl mu/trench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 /spl mu/A, endurance of 10/sup 11/ programming cycles and data retention capabilities for 10 years at 110/spl deg/C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.