OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

TLDR

The paper reviews the development status of the 180 nm Ovonic Unified Memory (OUM) phase‑change memory cell element. The authors examine the device structure and characterize the OUM element, highlighting its ultra‑high density, low‑voltage, high‑speed programming, high cycle count, high read speed, and competitive cost. The study finds that OUM is inherently radiation‑resistant, supports bit/byte/word programming without block erase, and offers low‑voltage, energy‑efficient operation suitable for mobile devices.

Abstract

This paper discusses the development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node. The device structure and characterization of the memory element will be reviewed. The key characteristics of the technology will be discussed for ultra-high density, low voltage, high-speed programming, high cycle count, high read speed, and competitive cost structure nonvolatile memory for stand alone and embedded applications. This technology is inherently radiation resistant and is bit byte or word programmable without the requirement of Flash-like block erase. Low voltage and energy operation make OUM an attractive candidate for mobile applications.