2003 · 13 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSilicon MaterialsDopant DiffusivityElectron-hole RecombinationElectron-ion RecombinationPolysiliconRecombination CentersSelf-aligned StructuresSpacer Design
An advanced self-aligned high-speed bipolar transistor (HS4) with a polysilicon emitter is presented. The silicided external base region is separated from the polysilicon emitter by an oxide sidewall spacer. The effect of the spacer width and the dopant concentration underneath this spacer on the electron recombination current at the base contact is described.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High-speed polysilicon emitter—base bipolar transistor
H.K. Park, K. Boyer, C. W. Clawson et al. · IEEE Electron Device Letters · 1986 · 40 citations
A 48ps ECL in a self-aligned bipolar technology
Katsuyoshi Washio, Toshio Nakamura, Kazuhiko Nakazato et al. · 1987 · 29 citations
Majority and minority carrier transport in polysilicon emitter contacts
E.F. Crabbé, S. Swirhun, Jesús A. del Alamo et al. · 1986 · 24 citations