Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Abstract

Lanthanum-based ternary oxide (, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both and films are amorphous while the as-deposited films form a polycrystalline layer/amorphous layer structure on Si. Transmission electron microscopy and electrical analysis show the absence of interfacial layers. The dielectric constants for , , and films are , , and , respectively, with leakage current density up to 6 orders of magnitude lower than that of thermal with the same effective oxide thickness. Conformal coating thickness is demonstrated on holes with aspect ratio .