IEEE Electron Device Letters · 1987 · 30 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsIon ImplantationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor ReliabilityThin Film Electrical PropertiesThin Film OxidationCharge TrappingFilm ThicknessFowler-nordheim TunnelingGate Oxide DegradationGate Oxide InterfacesGate OxidesImplantation Through Thin FilmsOxidation
A simple and manufacturable technique to improve thin-gate oxide integrity using nitrogen implant through a polycrystalline-silicon (poly-Si) gate MOS structure is described. The Auger depth profile of the film, after 1100°C oxidation cycle, shows nitrogen pile-up at both poly-Si and substrate interfaces, similar to the NH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> annealed thermal oxide. Interface-state generation and charge to breakdown under high-field/current stress are significantly improved. Fowler-Nordheim tunneling characteristics and measured capacitance reveal a 3-percent increase in the film thickness. Negative bulk charge trapping is similar to that of thermal oxide film. These properties can be attributed to the formation of the nitrogen-rich layers at both film interfaces, rather than the bulk of the film.
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Hole trapping and breakdown in thin SiO<sub>2</sub>
I.C. Chen, S. Holland, Chenming Hu · IEEE Electron Device Letters · 1986 · 130 citations