IEEE Electron Device Letters · 2007 · 1.1K citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsGraphene NanomaterialsIntegrated Circuit DesignNanoelectronicsGrapheneGraphene Field-effect TransistorsGraphene MaterialsGraphene-based MaterialsSilicon-on-insulator CmosSilicon-on-insulator TechnologyTop-gated Field-effect Transistors
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs
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