Influence of the molar ratio on the structural and electronic properties of MOVPE grown GaN

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.7K citations

White Oled, Electrical Engineering, Electronic Devices +14

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 357 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +8

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil, O. Briot, Roger-Louis Aulombard · Physical review. B, Condensed matter · 1995 · 309 citations

Materials Science, Wide-bandgap Semiconductor, Optical Materials +14

Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Japanese Journal of Applied Physics · 1992 · 224 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +9

Schottky barrier photodetector based on Mg-doped <i>p</i>-type GaN films

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1993 · 187 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15