Comparison of ICP-AlOx and ALD-Al2O3 Layers for the Rear Surface Passivation of C-Si Solar Cells

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Bram Hoex, S. B. S. Heil, E. Langereis et al. · Applied Physics Letters · 2006 · 712 citations · Full text

Engineering, Thin Film Process Technology, Thin Al2o3 Film +22

Measurement of the emitter saturation current by a contactless photoconductivity decay method.

D.E. Kane, R.M. Swanson · Photovoltaic Specialists Conference · 1985 · 447 citations

Electrical Engineering, Photoelectric Sensor, Engineering +6

General parameterization of Auger recombination in crystalline silicon

Mark Kerr, Andrés Cuevas · Journal of Applied Physics · 2002 · 443 citations

Electrical Engineering, Crystalline Silicon, Engineering +13

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

G. Agostinelli, A. Delabie, P. Vitanov et al. · Solar Energy Materials and Solar Cells · 2006 · 432 citations

Electrical Engineering, Wafer Scale Processing, Engineering +8

Silicon surface passivation by ultrathin Al₂O₃ films synthesized by thermal and plasma atomic layer deposition

G. Dingemans, R. Seguin, P. Engelhart et al. · physica status solidi (RRL) - Rapid Research Letters · 2009 · 200 citations

Materials Science, Ald Al 2, Crystalline Silicon +10