Field-driven ultrafast sub-ns programming in W\Al<inf>2</inf>O<inf>3</inf>\Ti\CuTe-based 1T1R CBRAM system

Abstract

We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.