Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Abstract

A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication