IEEE Electron Device Letters · 1997 · 40 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsCurrent-voltage CharacteristicsDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsThin-film TransistorsAmorphous SiliconAmorphous Silicon Thin-film TransistorsField-effect Transistor Transfer CharacteristicsGate-dependent Current-voltage BehaviorHydrogenated Amorphous SiliconThreshold VoltageThreshold Voltage ExtractionThreshold Voltage Modeling
In this letter, a new technique based on gated-four-probe hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) structure is proposed. This new technique allows the determination of the intrinsic performance of a-Si:H TFT without any influence from source/drain series resistances. In this method, two probes within a conventional a-Si:H TFT are used to measure the voltage difference within a channel. By correlating this voltage difference with the drain-source current induced by applied gate bias, the a-Si:H TFT intrinsic performance, such as mobility, threshold voltage, and field-effect conductance activation energy, can be accurately determined without any influence from source/drain series resistances.
4