IEEE Electron Device Letters · 1988 · 16 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsDopingIon ImplantationSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsAmorphous Silicon Thin-film TransistorsElectrode Surface StructureHydrogenated Amorphous SiliconImplantation Through Thin FilmsLow-energy Ion ImplantationPhosphorus-doped Amorphous SiliconSilicon DopingSilicon Thin Films
A low-energy ion doping technique has been applied to form source and drain regions of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. Phosphine gas diluted in hydrogen was discharged by RF power and magnetic field. Both phosphorus and hydrogen ions were accelerated to an energy of 5.5 keV and implanted into heated samples. The ON-OFF current ratio and the field-effect mobility of the fabricated TFTs were 10/sup 6/ and 0.12 cm/sup 2//V-s, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Amorphous-silicon image sensor IC
M. Matsumura, Hiroshi Hayama, Yasuo Nara et al. · IEEE Electron Device Letters · 1980 · 40 citations
Engineering, Computer Engineering, Electrical Engineering +15