I. D. French

Bias dependence of instability mechanisms in amorphous silicon thin-film transistors

M. J. Powell, C. van Berkel, I. D. French et al. · Applied Physics Letters · 1987 · 209 citations

Engineering, Electrical Engineering, Materials Science +17

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Journal of Applied Physics · 2000 · 151 citations

Engineering, Materials Engineering, Materials Science +17

The characteristics and properties of optimised amorphous silicon field effect transistors

Kenneth D. Mackenzie, A.J. Snell, I. D. French et al. · Applied Physics A · 1983 · 94 citations

Engineering, Electrical Engineering, Materials Science +10

Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

Pere Roca i Cabarrocas, R. Brenot, Pavel Bulkin et al. · Journal of Applied Physics · 1999 · 87 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Quality factor in <i>a</i>-Si:H <i>nip</i> and <i>pin</i> diodes

C. van Berkel, M. J. Powell, A. R. Franklin et al. · Journal of Applied Physics · 1993 · 81 citations

Engineering, Electrical Engineering, Materials Science +17